博士、教授、博士生导师，江苏省特聘教授，IEEE会员。2008年和2011年毕业于法国格勒诺布尔国立理工学院（INPG，位于欧洲著名微电子研究中心MINATEC内），获微纳电子学硕士和博士学位，师从知名微电子学家Gerard Ghibaudo教授（IEEE Fellow）和Francis Balestra教授（欧洲Si Nano研究中心负责人），从事集成电路设计和半导体器件的研究。博士毕业后，先后在日本国立物质材料研究所(2011.12-2013.08)和韩国东国大学(2013.10-2018.08)从事博士后研究和担任助理教授，2018年10月以南京邮电大学高层次人才引进(第三层次)加入电子与光学工程学院、微电子学院。多年来从事微纳半导体器件的研究，主要兴趣在器件物理(制造、表征、建模与仿真)，迄今已发表SCI期刊论文120余篇，其中第一作者或通讯作者60余篇，包括6篇Advanced Materials和4篇Advanced Functional Materials, 12篇IEEE Electron Device Letters (EDL)和IEEE Transactions on Electron Devices (TED)，9篇Applied Physics Letters，1篇Materials Today, 以及13篇国际会议论文和2个专著章节。连续十年(2014-2023)被IEEE Electron Device Society (EDL, TED)评选为金牌审稿人，于2015年担任Semiconductor Science and Technology客座编辑，并在2018年被顶级国际会议Materials Research Society (MRS)邀请做了特邀报告。

1. 半导体器件与器件物理(Semiconductor devices and the related device physics)
2. 电学特性表征、模拟与建模(Electrical property characterizations, simulations, and modeling)
3. 低频噪声(Low-frequency noise)

1，南京邮电大学引进人才科研启动基金(高层次人才)

2，江苏特聘教授
3，南京市高层次留学回国工作资助项目
4，国家自然科学基金面上项目
5，中德科学中心Mobility项目
6，中科院微电子所硅器件重点实验室开放课题项目

代表性论文(一作和通讯)：

2024
1.. H. Xie, W. Zhang, P. Zhou, S. Cristoloveanu, Y. Xu*, F.Y. Liu, J. Wan*, A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology, IEEE Electron Device Letters, 45(4), 558-561, 2024.
2. L. Chen, Q. Chen, H. Zhu, R. Wang, Y. Wu, R. Li, L. Zhu, G. Yang, X. Wan, X. Zhao, Z. Yu, B. Li, CL Tan, H. Sun, Y. Xu*, Exploring the influence of the contact resistance on perovskite phototransistors, Applied Physics Letters, 124(16), 162202, 2024.
3. C. Liu, Y. Chen, S. Cristoloveanu, P. Zhou, Y. Xu*, F.Y. Liu, J. Wan*, A New Compact Z2-FET Model Based on Artificial Neural Network and Its Applications, IEEE Transactions on Electron Devices, 71(6), 3532-3539, 2024.
4. K. Xiao, H. Wang, H. Xie, S. Li, Z. Zhao, Z. Cui, Q. Chen, P. Zhou, F. Liu, Y. Xu*, Y. Jiang, J. Wan*, A Novel NH3 Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature, IEEE Transactions on Instrumentation and Measurement, 73, 9510006, 2024.
5. Z. Luo, Z. Yu, X. Lu, W. Niu, Y. Yu, Y. Yao, F. Tian, CL. Tan, H. Sun, L. Gao, W. Qin, Y. Xu*, Q. Zhao*, X. Song*, Van der Waals Magnetic Electrode Transfer for Two-Dimensional Spintronic Devices, Nano Letters, 24(20), 6183-6191, 2024.
6. C. Zhang, F. Liu*, X. Li*, S. Chen, L. Shu, L. Ding*, Q. Zheng, Y. Xu*, X. Yu*, J. Wan*, Z. Han, B. Li*, T. Ye, Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology, IEEE Transactions on Electron Devices, 71(10), 5863-5873, 2024.
7. Y. Chen, C. Liu, T. Tian, H. Xie, S. Cristoloveanu, P. Zhou, Y. Xu*, F. Liu, J. Wan*, A Photosensitive Spiking Neuron Using a Single Band-Modulation Device With Tunable Spiking Sensitivity, IEEE Transactions on Electron Devices, 71(10), 5874-5880, 2024.

2023
1. F Zhuo, J Wu, B Li*, M Li, CL Tan, Z Luo, H Sun, Y. Xu*, Z Yu*, Modify power and performance of two-dimensional MoS2 field effect transistor, Research, 2023.
2. J Wu, G Huang, Y Wu, X Huang, R Yu, X Yang, G Chen, Y. Xu*, Insights into relationship between mechanical behavior and microstructure evolution of Sn-1.0 Ag-0.5 Cu-GNSs/Cu joint during thermal cycling, Journal of Materials Science: Materials in Electronic, 34 (2), 86, 2023.
3. Q Chen, J Cao, Y Liu, R Zhu, J Cao, Z Liu, X Zhao, J Wu, G Yang, L Zhu, J Wu, Z Yu, H Sun, R Li, S Xue, B Li, CL Tan, Y Xu*, Contact engineering for organic CMOS circuits, Journal of Physics: Materials, 7(1), 012002, 2023.

2022
1. J. Wu, H. Zhu, C.Q. Wu, L.J. Chen, R. Li, Z.Q. Wei, F.J. Ju, C.L. Tan, Z.H. Yu, H.B. Sun, Y. Xu*, Organic field-effect transistors with density of states modified by polymer-enhanced solvent vapor annealing, Solid-State Electronics, 194, 108384, 2022.
2. H Liang, J Cui, Z Yu, H Sun, H Wei, R Zakaria, B Li, J Wu, Y. Xu*, CL Tan*, High performance ultraviolet photodiode based on thin DPPT-TT donor–acceptor organic polymer, Applied Physics Letters, 121 (20), 2022.
3. J Wu, G Huang, Y Wu, X Huang, R Yu, X Yang, G Chen, CL Tan, ZH Yu, HB Sun, Y. Xu*, Applicability Evaluation of Nano-Al2O3 Modified Sn-Ag-Cu Solder in High-Density Electronic Packaging Subjected to Thermal Cycling, Crystals, 12 (12), 1736, 2022.
4. Q Chen, R Zhu, X Zhao, B Hao, B Li, Z Yu, H Sun, J Wu, CL Tan, Y. Xu*, Enhanced environmental stability of n-type polymer transistors with nickel contacts, Applied Physics Letters, 121 (24), 2022.

2021
1. S.H. Yang, F.S. Yang, H.L. Tang, M.H. Chiu, K.C. Lee, M.J. Li, C.Y. Lin, L.J. Li, V. Tung, Y. Xu*, Y.M. Shi, C.H. Lien, Y.F. Lin, Performance Limits and Potential of Multilayer Graphene–Tungsten Diselenide Heterostructures, Advanced Electronic Materials, 7,12, 2100355, 2021.

2020
1. D.K. Zhang, Y. Yin, W. Lv, F. Gao, D.F. Pan, X.C. Tu, S.H. Ju, X. Su, X.Z. Ma, H.B . Sun*, Y. Xu*, Y. Shi*，Sharply Increased Current in Asymmetrically Aligned Polycrystalline Polymer Transistors With Sub-Domain-Size Channels，IEEE Electron Device Letters, 41, 4, 589-592, 2020.
2. D.K. Zhang, Y. Yin, W. Lv, F. Gao, D.F. Pan, H.B . Sun*, Y. Xu*, S.H. Ju, S.L. Li, Y. Shi*, Suppressing off-state current via molecular orientation in submicrometer polymer field-effect transistors, Organic Electronics, 105742, 2020.
3. Q.J. Wang, S. Jiang, B.W. Zhang, E.Y. Shin, Y.Y. Noh*, Y. Xu*, Y. Shi, Y. Li*, Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors, The Journal of Physical Chemistry, 11, 4, 1466-1472, 2020.

2019
1. F.M. Huang, A. Liu, H.H. Zhu, Y. Xu*, F. Balestra, G. Ghibaudo, Y. Noh*, J.H. Chu, W.W. Li*，Reliable mobility evaluation of organic field-effect transistors with different contact metals，IEEE Electron Device Letters, 40, 4, 605-608, 2019.
2. E.S. Shin, W.T. Park, Y.W. Kwon, Y. Xu*, Y.Y. Noh*, Spontaneous doping at the polymer-polymer interface for high-performance organic transistors, ACS applied materials & interfaces, 11, 13, 12709-12716, 2019.
3. F.M. Huang, M.J. Li, Y. Xu, A.Y. Cui, W.W. Li*, Y. Xu*, J.H. Chu, Y.Y. Noh*, Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors With Top-Gate Staggered Structure, IEEE Transactions on Electron Devices, 66, 6, 2723-2728, 2019.
4. H.H. Zhu, E.S. Shin, A. Liu, D.S. Ji, Y. Xu*, Noh Y.Y. Noh*, Printable semiconductors for backplane TFTs of flexible OLED displays, Advanced Functional Materials, 1904588, 2019.
5. Y. Xu*, Y. Li, S.L. Li, F. Balestra, G. Ghibaudo, W.W. Li, Y.F. Lin, H.B. Sun*, J. Wan*, X.R. Wang, Y.F. Guo*, Y. Shi, Y.Y. Noh*, Precise Extraction of Charge Carrier Mobility for Organic Transistors, Advanced Functional Materials, 1904508, 2019. Front Cover

2018
1. C.H. Chen, W.W. Li, Y.M. Chang, C.Y. Lin, S.H. Yang, Y. Xu*, and Y.F. Lin*, Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials, Physical Review Applied, 10(4), 044047, 2018.
2. Y. Xu*, H.B. Sun, A. Liu, H.H. Zhu, B.H. Li*, T. Minari, F. Balestra, G. Ghibaudo, and Y. Y. Noh*, Essential Effects on the Mobility Extraction Reliability for Organic Transistors, Advanced Functional Materials, 28(42), 1803907, 2018.
3. A. Liu, H.H. Zhu, W.T. Park, S.J. Kang, Y. Xu*, and Y. Y. Noh*, Room‐Temperature Solution‐Synthesized p‐Type Copper (I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics, Advanced Materials, 30(34), 1802379, 2018. Back Cover
4. Y. Xu*, H.B. Sun, A. Liu, H.H. Zhu, W.W. Li, Y.F. Lin, and Y. Y. Noh*, Doping: a key enabler for organic transistors, Advanced Materials, 30(46),1801830, 2018.
5. A. Liu, H.H. Zhu, H.B. Sun, Y. Xu*, and Y. Y. Noh*, Solution Processed Metal Oxide High κ Dielectrics for Emerging Transistors and Circuits, Advanced Materials, 30(34), 1870258, 2018.

2017
1. Y. Xu*, H.B. Sun, W.W. Li, Y.F. Lin*, F. Balestra, G. Ghibaudo and Y. Y. Noh*, Exploring the Charge Transport in Conjugated Polymers, Advanced Materials, 29, 41, Nov. 2017. Inside Front Cover
2. X.J. Guo*, Y. Xu*, S. Ogier*, T.N. Ng*, M. Caironi*, A. Perinot*, L. Li*, J.Q. Zhao, W. Tang, R.A. Sporea*, A. Nejim*, J. Carrabina*, P. Cain*, and F. Yan*, Current Status and Opportunities of Organic Thin-Film Transistors Technologies, IEEE Transactions on Electron Devices, 64, 1906-1921, 2017.
3. H.B. Sun, Y. Xu*, and Y. Y. Noh*, Flexible Organic Amplifier, IEEE Transactions on Electron Devices, 64, 1944-1954, 2017.
4. Y. Xu*, H.B. Sun and Y. Y. Noh*, Schottky Barrier in Organic Transistors, IEEE Transactions on Electron Devices, 64，pp.1932-1943, 2017.

2016
1. Y. Xu*, H.B. Sun, E.Y. Shin, Y.F. Lin, W.W. Li*, and Y. Y. Noh*, Planar-Processed Polymer Transistors, Advanced Materials, 28, 38, pp. 8531-8537, 2016.

2015
1. Y.F. Lin*, Y. Xu(Equal contribution), C.Y. Lin, Y.W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno and K. Tsukagoshi*, Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors, Advanced Materials, 27, pp. 6612-6691, 2015.
2. Y. Y. Noh*, Y. Xu* (Guest Editor), M. Caironi* and TD Anthopoulos*, Preface: Printed electronics, Semiconductor Science and Technology, 30(10), pp. 100301, 2015.
3. B. NketiaYawson, H. Kang, E.Y. Shin, Y. Xu*, C.D. Yang* and Y. Y. Noh*, Effect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules, Organic Electronics, 26, pp. 151-157, 2015.
4. Y. Xu*, C. Liu*, P.S.K. Amegadez, G.S. Ryu, H.X. Wei, F. Balestra, G. Ghibaudo, and Y. Y. Noh*, On the Origin of Improved Charge Transport in Double-Gate In-Ga-Zn-O Thin-Film Transistors: A Low-Frequency Noise Perspective, IEEE Electron Device Letters, 10, pp.1040-1043, 2015.
5. W.T. Park, I. Son, H.W. Park, K.B. Chung, Y. Xu*, T. Lee* and Y.Y. Noh*, Facile Routes to Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing, ACS Applied Materials & Interface, 7, pp. 13289-13294, 2015.
6. Y. Xu*, C. Liu, D.Y. Khim and Y. Y. Noh*, Development of High-Performance Printed Organic Field-Effect Transistors and Integrated Circuits, Physical Chemistry Chemical Physics, 17, pp. 26553-26574, 2015.
7. C. Liu, Y. Xu (Equal contribution), and Y. Y. Noh*, Contact engineering in organic field-effect transistors, Materials Today, 18, pp. 79-96, 2015.

2014
1. Y. Xu*, C. Liu, Paul S.K. Amegadez, W.T. Park, D.X. Long, T. Minari, F. Balestra, G. Ghibaudo and Y.Y. Noh*, Significant roles of low temperature post-metallization annealing in solution processed oxide thin film transistors, Applied Physics Letters, 105, 13, pp.133505-5, 2014.
2. Y. Xu, K.J. Baeg, W.T. Park, A. Cho, E.Y. Choi and Y. Y. Noh*, Regulating Charge Injection in Ambipolar Organic Field-Effect Transistors by Mixed Self-Assembled Monolayers, ACS Applied Materials & Interface, 6 (16), pp. 14493-14499, 2014.
3. D.Y. Khim, K.J. Baeg, M. Caironi, Y. Xu*, D.Y. Kim* and Y. Y. Noh*, Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Chemical Doping for High Performance Complementary Circuits, Advanced Functional Materials, 24, 40, pp. 6252-6261, 2014. Front Cover
4. Y. Xu*, C. Liu, H.B Sun, F. Balestra, G. Ghibaudo, W. Scheideler and Y. Y. Noh*, Metal evaporation dependent charge injection in organic transistors, Organic Electronics, 15, pp. 1738-1744, 2014.
5. C. Liu, Y. Xu*, G. Ghibuaod, X. Lu, T. Minari* and Y.Y. Noh*, Evaluating injection and transport properties of field-effect transistors by the convergence point in transfer-length method, Applied Physics Letters, 104, pp.013301-5, 2014.

2013
1. Y. Xu*, C. Liu*, W. Scheideler, S.L. Li, W.W. Li, Y.F. Lin, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Understanding Thickness Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise, IEEE Electron Device Letters, 34, pp. 1298-1300, 2013.
2. Y. Xu*, C. Liu, W. Scheideler, P. Darmawan, S.L. Li, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, How Small The Contacts Could Be Optimal for Nanoscale Organic Transistors?, Organic Electronics, 14, pp. 1797-1804, 2013.
3. C. Liu, Y. Xu*, Y. Li, W. Scheideler and T. Minari*, Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors, The Journal of Physical Chemistry C, 117, pp. 12337-12345, 2013.
4. Y. Xu*, W. Scheideler, C. Liu, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Contact Thickness Effects to Bottom-Contact Coplanar Organic Field-Effect Transistors, IEEE Electron Device Letters, 34, pp. 535-537, 2013.
5. Y. Xu*, C. Liu, Y. Li, T. Minari, P. Darmawan, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Joule’s law for organic transistors exploration: case of contact resistance, Journal of Applied Physics, 113, pp.064507-5, 2013. Certificate given by the Editor-in-Chief.

2012
1. Y. Xu*, P. Darmawan, C. Liu, Y. Li, T. Minari, G. Ghibaudo and K. Tsukagoshi*, Tunable contact resistance in double-gate organic field-effect transistors, Organic Electronics, 13, pp. 1583-1588, 2012.

2011
1. Y. Xu*, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors, Applied Physics Letters, 98, 3, pp.033505-3, 2011.
2. Y. Xu*, F. Balestra and G. Ghibaudo, Theoretical analysis of carrier mobility in organic field-effect transistors, Applied Physics Letters, 98, pp.233302-3, 2011. ’Excellent’ evaluation given by peer reviewer
3. Y. Xu*, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Origin of low-frequency noise in pentacene field-effect transistors, Solid State Electronics, 61, 1, pp.106-110, 2011.
4. Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, M. Benwadih, J. Chroboczek, F. Balestra and G. Ghibaudo, Modeling of static electrical properties in organic field-effect transistors, Journal of Applied Physics, 110, pp.014510-12, 2011.
5. Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra and G. Ghibaudo, Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors, Organic Electronics, 12, pp.2019-2024, 2011.
6. Y. Xu*, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari, C. Liu, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Carrier mobility in organic field-effect transistors, Journal of Applied Physics, 110, pp.104513-9, 2011.

2010
1. Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, J. Chroboczek and G. Ghibaudo, Extrac-tion of low-frequency noise in contact resistance of organic field-effect transistors, Applied Physics Letters, 97, 3, pp.033503-3, 2010.
2. Y. Xu*, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra and G. Ghibaudo, Modified transmission-line method for contact resistance extraction in organic field-effect transistors, Applied Physics Letters, 97, 6, pp.063302-3, 2010.
3. Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek and G. Ghibaudo*, Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors, Journal of Applied Physics, 107, 11, pp.114507-7, 2010.