[1] S. Zhan*, Z. Wang*, L. Wang*, W. Ran, T. Yao, X. Zhang, B. Wei, Q. Deng, and G. Shen.
Reconfigurable Hydroxyl Dissociation for Spectrally Decoupled Weight Programming
and Photocurrent Computing, Advanced Materials, Accepted. 影响因子:26.8,(中科院 Top 期刊)
[2] W. Huang, J. Tang, B. Li, X. Zhang, Z. Lin, H. Zhang, P. Hang, X. Yu*, X. Li*, and L.
Wang*. Design of all-optical bidirectional self-powered synaptic devices for neuromorphic
computing applications, Small, 2025:2505327. 影响因子:12.1,(中科院 Top 期刊)
[3] W. Huang, S. Jiang, Z. Lin, X. Zhang, H. Fei, J. Jiang, J. Tang, X. Zhang, X. Yu*, L. Wang*,
and X. Li*. All-optical modulation self-powered optoelectronic synaptic devices with
monochromatic ultraviolet for inhibitory/excitatory synaptic behaviors, Applied Physics
Reviews, 2025(12):031418. 影响因子:11.6,美国物理协会旗舰期刊,(中科院 Top 期刊)
[4] J. Wu*, X. Yang, J. Chen, Y. Mao, W. Boukhili, G. Chen, Y. Bao, and L. Wang*, Deep
learning-driven intelligent prediction for tailoring electrical properties of N2200-based
donor-acceptor conjugated copolymer OFETs, Science China Materials, 2025(68),
4392-4400. (中科院 1 区 Top 期刊)
[5] X. Liu, Y. Gui, Z. Wang, P. Zhou, J. Chen, T. Guo, X. Zhang, S. Zhang, X. Wei, J. Wang, X.
Lian, X. Wan, N. He, Y. Gu, E-T. Hu, Q. Chen, H. Ling*, and L. Wang*, Robust
9optoelectronic dual-mode memristor enabled by ZnO/MoS heterojunction for synaptic binics
and in-memory computing, Science China Information Sciences, 2026(69), 1-12, (中科院 1
区 Top 期刊)
[6] N. He, G. Bai, K. Chen, X. Wan*, J. Liu, Z. Li, H. Qin, X. Lian, X. Liu, D. Yan, Y. Tong, Q.
Chen*, X. Ji* and L. Wang*. Lattice-engineered high-quality β-Ga2O3
membranes formemristive applications towards image encryption, decryption, and edge detection, Science
China Materials, 2026, accepted. (中科院 1 区 Top 期刊)
[7] X. Lian, X. Zhang, S. Li, B. Ding, J. Jiang, Y. Zhang, Y. Guo*, Z. Cai*, and L. Wang*.
Exploring the potential of 2D PtTe2-based memristors for neuromorphic computing, Applied
Physics Letters, 2024(126), 062108. (自然指数期刊)
[8] J. Jiang, B. Ding, S. Li, X. Zhang, H. Wang, J. Wu, X. Liu, Z. Wang, X. Lian*, W. Huang*,
L. Wang*. All-optical nonlinear activation functions realized on phase-change photonic
integrated circuits with microheaters, Journal of Semiconductors, 2024(46):022405. (中国
科技期刊卓越行动计划)
[9] H. Wang, M. Zhou, X. Jia, H. Wei, Z. Hu, W. Li*, Q. Chen*, L. Wang*. Recent progress on
artificial intelligence-enhanced multimodal sensors integrated devices and systems, Journal
of Semiconductors, 2024(46):011610. (中国科技期刊卓越行动计划)
[10] 连晓娟、蒋纪元、万相、肖宛昂、王磊*. 二氧化硅/氟化镁基超低能耗相变集成光子器
件研究,电子学报, 2024(11):3886. (CCF 高质量科技期刊 T1 类)
[11] W. Huang, X. Xia, H. Zhang, T. Guo, P. Hang*, B. Li, J. Tang, B. Li, C. Zhu, L. Wang, D.
Yang, X. Yu*, X. Li*. High-performance carbon-electrode-based self-powered optoelectronic
synaptic devices, Science China Information Sciences, 2024(67): 159403. (CCF A 类期刊)
[12] W. Huang*, H. Zhang, J. Tang, Z. Lin, T. Guo, Y. Zhou, S. Jiang, P. Hang*, M. Jiao, C. Zhu,
L. Wang, D. Yang, X. Yu*, X. Li*. Self-powered optoelectronic synaptic devices for
neuromorphic computing with the lowest energy consumption density, ACS Photonics,
2024(11): 3095. (发表当年中科院 1 区,Top 期刊)
[13] X. Lian, J. Jiang, Z. Tao, G. Cui, W. Huang*, Z. Cai*, L. Wang*. Electrically programmable
phase-change nanophotonic circuits designed for edge detection application, IEEE Electron
Device Letters, 2024(45):1101. (中科院 2 区, IF:4.9,电子器件领域旗舰期刊)
[14] M. C. Zhang, X. Y. Chen, Z. Y. Chen, R. H. Dan, Y. X. Wei, H. H. Rong, Q. Wang, X. Chen,
A. Z. Han, Y. Wang, W. J. Shao, H. Zhang, Y. R. Zhang, L. Wang*, J. G. Xu*, and Y. Tong*.
Exploration of threshold and resistive-switching behaviors in MXene/BaFe12O19
ferroelectric memristors, Applied Surface Science, 2023(613):155956. (发表当年中科院1区,Top期刊)
[15] M. C. Zhang, Q. Qin, X. Y. Chen, R. Z. Tang, A. Z. Han, S. H. Yao, R. H. Dan, Q. Wang, Y.
Wang, H. Gu, H. Zhang, E. T. Hu, L. Wang*, J. G. Xu*, and Y. Tong*. Towards an universal
artificial synapse using MXene-PZT based ferroelectric memristor, Ceramics International,
2022(48):16263. (发表当年中科院 1 区,Top 期刊)
[16] X. J. Lian, Z. X. Gao, J. K. Fu, X. Wan, Q. Y. Ren, X. Y. Liu, and L. Wang*. Design of
bifunctional phase-change device for storage memories and reconfigurable metasurfaces,
Ceramics International, 2023(49):7785. (发表当年中科院 1 区,Top 期刊)
[17] Z. J. Zhao*, B. S. Xiong*, L. Wang, Q. F. Ou, L. Yu, and F. Kuang. RetinexDIP: a unified
deep framework for low-light image enhancement, IEEE Transactions on Circuits and
Systems for Video Technology, 2021(32):1076. (发表当年中科院 1 区,Top 期刊, 高被引
论文,视频与视觉电路系统领域顶刊)
[18] X. J. Lian, J. Y. Jiang, J. K. Fu, X. Wan, X. Y. Liu, Z. K. Cai*, and L. Wang*. Phase-change
nanophotonic circuits with crossbar electrode and integrated microheaters, IEEE Electron
Device Letters, 2022(43):2192. (中科院 2 区, IF:4.9,电子器件领域器件期刊)
[19] X. Y. Liu, J. H. Yu, P. F. Ye, L. Gu, H. M. Qin, N. Wang, H. Li, Y. Wang, M. C. Zhang, N. He,
X. Wan, X. J. Lian, E. T. Hu*, Y. Tong*, and L. Wang*. Experimental and first-principles
study of visible light responsive memristor based on CuAlAgCr/TiO2/W structure for
artificial synapses with visual perception, Advanced Electronic Materials, 2023(9):2201320.
(中科院 2 区, IF:6.2)
[20] Z. K. Cai*, X. Wan, X. Y. Liu, Q. Y. Ren, X. J. Lian*, and L. Wang*. Physics-based
modelling strategies of phase-change random access memory, IEEE Transactions on
Electron Devices, 2022(69):6510. (中科院 2 区, IF:3.1,电子器件领域顶刊)
[21] X. J. Lian, J. K. Fu, Z. X. Gao, and L. Wang*. Thermoelectric effects on amorphization
process of blade-type phase change random access memory, IEEE Transactions on
Electron Devices, 2021(68):6139. (中科院 2 区, IF:3.1,电子器件领域顶刊)
[22] X. J. Lian, and L. Wang*. Boolean logic function realized by phase-change blade type
random access memory, IEEE Transactions on Electron Devices, 2022(69):1849. (中科院
2 区, IF:3.1,电子器件领域顶刊)
[23] X. J. Lian and L. Wang*. Boolean logic function realized by phase-change blade type
random access memory, IEEE Transactions on Electron Devices, 2022(69):1849. (中科院
2 区, IF:3.1,电子器件领域顶刊)
[24] N. He, J. Liu, J. G. Xu, X. J. Lian, X. Wan, E. T. Hu, X. Y. Liu, J. Ji, H. Zhang, L. Wang*, F.
Xu*, and Y. Tong*. Inserted effects of MXene on switching mechanisms and characteristics
of SiO2-based memristor: experimental and first-principles investigations, IEEE
Transactions on Electron Devices, 2022(69):3688. (中科院 2 区, IF:3.1,电子器件领域顶
刊)
[25] J. Wen and L. Wang*. Interfacial resistance characterization for blade-type phase change
random access memory, IEEE Transactions on Electron Devices, 2020(67):968. (中科院 2
区, IF:3.1,电子器件领域顶刊)
[26] X. J. Lian, C. Y. Sun, Z. H. Tao, X. Wan, Z. K. Cai*, and L. Wang*. Realization of complete
Boolean logic and combinational logic functionalities on a universal logic circuit, 电子学报
(英文), 2024(33):1137. (CCF 高质量科技期刊 T1 类)
[27] N. He, L. Wang*, and Y. Tong. Investigating the effects of V2C MXene on improving the
switching stability and reducing the operation voltages of TiO2-based memristors, 电子学报
(英文), 2024(33):1181. (CCF 高质量科技期刊 T1 类)
[28] X. J. Lian, Y. L. Shi, X. Y. Shen, X. Wan, Z. K. Cai*, and L. Wang*. Design of high
performance MXene/Oxide structure memristors for image recognition applications, 电子学
报(英文), 2024(33):336. (CCF 高质量科技期刊 T1 类)
[29] 连晓娟、高志瑄、付金科、王磊*. 基于刀片型限制结构的相变存储器阵列的热串扰效
应研究, 电子学报, 2023(51):396. (CCF 高质量科技期刊 T1 类)