谷燕，工学博士，2023年毕业于江南大学物联网工程学院，2024年加入南京邮电大学集成电路科学与工程学院。主要研究方向为宽禁带半导体氮化镓光电器件与集成，长期从事III-V族宽禁带半导体、AlGaN基第三代宽禁带半导体器件和器件物理的相关研究工作。迄今共发表SCI论文50余篇，其中以一作/通讯在Applied Physics Letters、IEEE Transactions on Electron Devices等学术期刊上发表SCI论文12篇；申请发明专利10余项。

目前主要集中在宽禁带半导体材料GaN基紫外探测器、射频器件以及光电突触忆阻器件的研究，研究方向包括：

（1）氮化镓光电器件与集成、应用

（2）新型异质结紫外探测器及机理研究

（3）III族氮化物半导体HEMT射频器件

（1）国家自然科学基金青年项目，2025.01-2027.12，在研，主持

（2）南京邮电大学高水平师资科研启动资金项目，2024.07-2027.06，在研，主持

（3）江苏省前沿技术研发计划项目，2024.09-2027.09，在研，参与

[1] Gu Yan; Guo Jiarui; Ye Bingjie; Yang Xifeng; Xie Feng; Qian Weiying; Zhang Xiangyang; Lu Naiyan; Liu Yushen; Yang Guofeng; Self-powered AlGaN-based MSM solar-blind ultraviolet photodetectors with high Al-content AlxGa1−xN/AlyGa1−yN asymmetrical heterostructure, Applied Physics Letters, 2023, 123(23).               

[2] Gu Yan; Xie Feng; Fan Qigao; Jiang Xuecheng; Guo Jiarui; Xie Zhijian; Zhang Qi; Zhang Xiumei; Chen Guoqing; Yang Guofeng ; Al0.18Ga0.82N/GaN two-dimensional electron gas-based ultraviolet photodetectors with symmetrical interdigitated structure, IEEE Transactions on Electron Devices, 2023, 70(1): 140-146.                 

[3] Gu Yan; Fan Qigao; Liu Yushen; Yang Xifeng; Jiang Xuecheng; Guo Jiarui; Zhang Xiumei; Lu Naiyan; Chen Guoqing; Yang Guofeng ; High-temperature forward and reverse current transport mechanisms of AlGaN-based solar-blind UV photodetector, IEEE Transactions on Electron Devices, 2022, 69(12): 6804-6810.                 

[4] Gu Yan; Jiang Xuecheng; Lu Naiyan; Guo Jiarui; Liu Yushen; Yang Xifeng; Qian Weiying; Zhang Xiangyang; Chen Guoqing; Tao Tao; Yang Guofeng ; 2-mercaptobutanedioic-acid-modified AlGaN/GaN high electron mobility transistor with folded gate for Fe3+ detection, IEEE Journal of the Electron Devices Society, 2023, 11: 518-523.         

[5] Gu Yan; Yang Guofeng; Danner Aaron; Yan Dawei; Lu Naiyan; Zhang Xiumei; Xie Feng; Wang Yueke; Hua Bin; Ni Xianfeng; Fan Qian; Gu Xing; Chen Guoqing ; Analysis of high-temperature carrier transport mechanisms for high Al-content Al0.6Ga0.4N MSM photodetectors, IEEE Transactions on Electron Devices, 2020, 67(1): 160-165.

[6]  Chen Junyuan; Wang Zhou; Lin Yijing; Dou Shiting; Zhu Haoxiang; Dai Yuhang; Yang Siqi; Zhi Ting; Wang Jin; Wang Lei; Chen Qiang Chen;  Gu Yan; and Liu  Xiaoyan; Optical crosstalk reduction of InGaN micro-LED array based on a reflective wall design for display applications, Optics Letters, 2026, 51(2):476-479.