（1）Tingrui Huang, Jie Cao, Zuoxu Yu, Yuzhen Zhang, Wenting Xu, Guangan Yang*, Wangran Wu*, Weifeng Sun, "Positive Bias Stress Reliability of InSnO TFTs: Analysis and Improvement Strategies," Applied Surface Science, 2025, in publication. （期刊论文，通讯作者）
（2）Tingrui Huang, Zuoxu Yu, Yuzhen Zhang, Di Gui, Mingming Liu, Kaizhi Sui, Wenting Xu, Guangan Yang*, Wangran Wu*, Weifeng Sun, "A Flexible Low Dropout Regular Based on InSnO Thin-Film Transistors with Superior Bending Robustness and Ultra-low Quiescent Current," IEEE Electron Device Letters, vol. 46, no. 4, 2025, pp. 592-595. （期刊论文，通讯作者）
（3）Guangan Yang, Geng Huang, Hong Zhu, Haotian Wu, Tianzhen Li, Tingrui Huang, Zuoxu Yu, Yong Xu, Weifeng Sun, Wangran Wu*, Jinshun Bi*, "Experimental Investigation on the Electrical Properties of a-InGaZnO Thin-Film Transistors Under Total Dose Ionizing Radiation," IEEE Electron Device Letters, vol. 46, no. 3, 2025, pp. 440-443. （期刊论文，第一作者）
（4）Hong Zhu, Yi Qian, Yu Yan, Lijian Chen, Quanhua Chen, Huabin Sun, Yong Xu*, Guangan Yang*, "Experimental Investigation on the Electrical Properties of DPPT-TT Polymer Field-Effect Transistors Featuring Stair Gate Dielectric," Polymers, vol. 17, no. 3, 2025, p. 289. （期刊论文，通讯作者）
（5）Guangan Yang, Weijia Song, Zuoxu Yu, Tingrui Huang, Jie Cao, Yong Xu, Huabin Sun, Weifeng Sun*, Wangran Wu*, "High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region," IEEE Transactions on Electron Devices, vol. 71, no. 5, 2024, pp. 2990-2994. （期刊论文，第一作者）
（6）Biaobiao Ding, Li Zhu, Guangan Yang*, Jie Wu, Zhihao Yu, Chee Leong Tan*, Yong Xu, Huabin Sun, "Quantitative Measurement of Interface State Density in Donor-Acceptor Polymer Transistors," IEEE Journal of the Electron Devices Society, vol. 11, 2023, pp. 282-287. （期刊论文，通讯作者）
（7）Guangan Yang, Hao Tian, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun*, Wangran Wu*, "A 1-V Supply a-InGaZnO-Based Voltage Reference With Enhancement- and Depletion-Mode Thin-Film Transistors," IEEE Electron Device Letters, vol. 43, no. 11, 2022，pp. 1898-1901. （期刊论文，第一作者）
（8）Guangan Yang, Hao Tian, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun*, Wangran Wu*, "400-V Amorphous IGZO Thin-Film Transistors with Drift Region Doped by Hydrogen," IEEE Transactions on Electron Devices, vol. 69, no. 7, 2022, pp. 3732-3736. （期刊论文，第一作者）
（9）Guangan Yang, Zuoxu Yu, Hao Tian, Tingrui Huang, Yong Xu, Huabin Sun, Weifeng Sun*, Wangran Wu*, "Bilateral 60-V Amorphous InGaZnO Thin-Film Transistors with Symmetric Stair Gate Dielectric," IEEE Transactions on Electron Devices, vol. 69, 2022, no. 10, pp. 5556-5561. （期刊论文，第一作者）
（10）Guangan Yang, Mengyao Li, Zuoxu Yu, Tingrui Huang, Yong Xu, Huabin Sun, Siyang Liu, Weifeng Sun*, Wangran Wu*, "High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure," IEEE Transactions on Electron Devices, vol. 68, no. 9, 2021, pp. 4462-4466. （期刊论文，第一作者）
（11）Guangan Yang, Wangran Wu, Xingyao Zhang, Pengyu Tang, Jing Yang , Long Zhang, Siyang Liu, Weifeng Sun*, "Experimental investigation on total-ionizing-dose radiation effects on the electrical properties of SOI-LIGBT," Solid-State Electronics, 2020, vol. 175. （期刊论文，第一作者）
（12）Guangan Yang, Tingrui Huang, Wangran Wu*, Hao Tian, Zuoxu Yu, Siyang Liu, Weifeng Sun, "High-Voltage a-IGZO Thin Film Transistor with the Symmetrical Stair Gate-Dielectric Structure," in 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2022, pp. 1-4. （会议论文，第一作者）
（13）Guangan Yang, Wangran Wu, Xingyao Zhang, Pengyu Tang, Jing Yang , Long Zhang, Siyang Liu, Weifeng Sun*, "Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose Radiation," in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp. 431-434. （会议论文，第一作者）
（1）杨光安；黄辰阳；朱洪；徐勇；孙华斌；于志浩；陈子龙；吴洁；朱力；一种高功率a-IGZO薄膜晶体管及其制备方法，2024-01-04，中国，202310762255.0 （专利，授权）
