个人信息

姓  名: Dongyoon Khim 性  別: 导师类型: 博士生导师
技术职称: 教授 电子邮箱: dongyoonkhim@njupt.edu.cn
学术型博士招生学科: (140100)集成电路科学与工程
学术型硕士招生学科: (140100)集成电路科学与工程
专业型硕士招生类别(领域): (085403)集成电路工程
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个人简介:

I received my Bachelor of Science degree in Electrical and Electronics Engineering from Sungkyunkwan University in 2008. Subsequently, I earned both my Master of Science and Doctor of Philosophy degrees in Materials Science and Engineering from the Gwangju Institute of Science and Technology (GIST) in 2009 and 2014, respectively. My doctoral dissertation was focused on organic electronic circuits by printing process". At the commencement ceremony, I was honored to receive the award for Best Research, as a representative of the graduating class. From 2014 to 2017, I pursued postdoctoral research on the development of organic-inorganic hybrid electronic devices at both Dongguk University in Korea and Imperial College London in the United Kingdom. During this period, I was also selected for an overseas research fellowship program for young scientists sponsored by the National Research Foundation of Korea. From 2018 until February 2024, I was engaged in research and development related to inkjet-printed OLEDs and Li-ion Battery project at LG Chem. Since March 2024, I have been serving as a Professor at the College of Integrated Circuit Science and Engineering at Nanjing University of Posts and Telecommunications (NJUPT).









研究领域:

The primary focus of my research centers around the development of organic-inorganic hybrid devices geared towards future electronic applications, particularly highlighting advancements in field-effect transistors, sensors, memory devices, and organic light-emitting diodes (OLEDs). In order to achieve our goal, our research covers a wide range of areas, such as various semiconductor materials, the physics of devices, manufacturing methods, and the applications of devices.










代表性学术成果:

1. "Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors", Adv. Funct. Mater. (2019.11.19) 29, 1902591.

2. "Modulation-Doped In2O3/ZnO Heterojunction Transistors processed from solution", Adv. Mater. (2017.05.17) 19-19, 1605837.

3. "Hybrid organic–metal oxide multilayer channel transistors with high operational stability", Nature Electronics (2019.12.16) 2, 587–595.

4. "Uniaxial Alignment of Conjugated Polymer Films for High‐Performance Organic Field‐Effect Transistors", Adv. Mater. (2018.03.27) 30, 20, 1705463.

5. "Precisely Controlled Ultra-thin Polymer Films for Large Area Transparent Transistors and Highly Sensitive Chemical Sensor", Adv. Mater. (2016.04.13) 28-14, 2752-2759 (Selected as cover in Adv. Mater.).

6. "Large Enhancement of Carrier Transport in Solution-Process Field-Effect Transistors by Dielectric Engineering", Adv. Mater. (2016.01.20) 28-3, 518-526.

7. "Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective inkjet-Printed Chemical Doping for High Performance Complementary Circuits", Adv. Funct. Mater. (2014.10.29) 24-40, 6252-6261. (Selected as front cover in Adv. Funct. Mater.)

8. "Simple Bar-Coating Process for Large-Area, High-Performance Organic Field-Effect Transistors and Ambipolar Complementary Integrated Circuits", Adv. Mater. (2013.08.21) 25-31, 4302-4308. (Selected as front cover in Adv. Mater.)